BTA16-600BW datasheet(1/6 Pages) LUGUANG

No. de pieza	BTA16-600BW

Descripción Electrónicos	16A Ⅲ&ⅣSERIES TRIACS

PDF	6 Pages

Scroll/Zoom	100%

Fabricante Electrónico	LUGUANG [Shenzhen Luguang Electronic Technology Co., Ltd]

Página de inicio	http://www.luguang.cn/web_en/index.html

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BTA16 BTB16

16A Ⅲ&ⅣSERIES TRIACS

http://

www.lgesemi.com

Revision:20230619-P1

mail:lge@lgesemi.com

Features

◇

The LGE BTA16/BTB16, 16A Ⅲ &Ⅳquadrants series

triacs ,which can be operated in Ⅲ &Ⅳquadrants.As

silicon bidirectional device,with NPNPN five-layer structure;

singlesided trenching technology,mesa glass passivation

process;

◇

multi-layer metallized electrode on the back side;

◇

High blocking voltage and high temperature stability.

Applications

The LGE BTA16/BTB16 is suitable for inductive load

switching operations,also can be used in ON/OFF function

applications such as washing machine,induction motor

starting circuits,vacuum cleaners,power tools and other

motors such as speed control maker; heating regulation,

solid state relay; phases control circuit ; AC motor speed

regulation,and so on.

Mechanical Data

◇

Moisture Sensitivity: MSL Level 1,per J-STD-020

◇

Terminals:Matte Tin Finish.

Solderable per MIL-STD-202 Method 208

◇

Case Material：Molded Plastic;

◇

Molding compound meet UL Flammability

Classification Rating 94V-0

◇

Case:JEDEC TO-220,TO-

220F,TO-263

MAXIMUM RATING

Ratings at 25℃ ambient tepmerature unless otherwise specified.

PARAMETER

SYMBOL

VALUE

UNITS

R.M.S. On-State Current

BTA

BTB

Tc=80℃

Tc=90℃

IT(RMS)

16

A

Non-Repetitive

Surge

Peak

On-State

Current(fFull Cycle,Tj initial=25℃)

F=50HZ

T=20ms

ITSM

160

A

F=60HZ

T=16.7ms

168

I2t Value for Fusing

tp=10ms

I2t

144

A2s

Critical Rate of Rise of On-State Current

IG=2×IGT，tr≤100ns

F=120HZ Tj=125℃

di/dt

50

A/μs

Repetitive peak Off-State voltage

Tj=25℃

VDRM/VRRM

600/800

V

Non repetitive surge peak off-state voltage tp=10ms

Tj=25℃

VDSM/VRSM

VDRM/VRRM+100

V

Peak Gate Current

tp=20μs

Tj=125℃

IGM

4

A

Average Gate Power Dissipation

Tj=125℃

PG(AV)

1

W

Typical Thermal Resistance

(Junction to Ambient)

TO-220AB/TO-220ABins

RΘJA

60

℃

/W

TO-263

45

Typical Thermal Resistance(Junction to

Case (AC))

TO-220AB/TO-263

RΘJC

1.2

℃

/W

TO-220AB Insulated

2.1

Maximum Operating Junction temperature

TJ

-40~+125

℃

Storage temperature range

TSTG

-40~+150

℃

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BTA16-600BW Datasheet(PDF) 1 Page - Shenzhen Luguang Electronic Technology Co., Ltd

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