Data Sheet

ADRF5440

SPECIFICATIONS

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Rev. A | 4 of 18

Table 1. Electrical Specifications (Continued)

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

RECOMMENDED OPERATING CONDITIONS

Supply Voltage

Positive

VDD

3.15

3.45

V

Negative

VSS

−3.45

−3.15

V

Digital Control Voltage

VCTRL

0

VDD

V

RF Input Power2

PIN

f = 3GHz to 70GHz, TCASE = 85°C3

Through Path

RF signal is applied to RFC or through a

connected RFx

24

dBm

Hot Switching

RF signal is present at RFC while switching

between RFx

24

dBm

Case Temperature

TCASE

−40

+105

°C

1 For input linearity performance over frequency, see Figure 21 to Figure 24.

2 For power derating over frequency, see Figure 2 and Figure 3.

3 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 3dB.

SINGLE-SUPPLY OPERATION

VDD = 3.3V, VSS = 0V, V1 = 0V or VDD, V2 = 0V or VDD, TCASE = 25°C for 50Ω system, unless otherwise noted.

Table 2. Single-Supply Operation Specifications

Parameter

Symbol

Test Conditions/Comments

Min

Typ

Max

Unit

FREQUENCY RANGE

f

1

81

GHz

SWITCHING CHARACTERISTICS

Rise Time and Fall Time

tRISE, tFALL

10% to 90% of RFOUT

20

ns

On Time and Off Time

tON, tOFF

50% VCTRL to 90% of RFOUT

58

ns

0.1dB RF Settling Time

50% VCTRL to 0.1dB of final RFOUT

62

ns

INPUT LINEARITY

f = 1GHz to 81GHz

0.1dB Power Compression

P0.1dB

13

dBm

Input Third-Order Intercept

IIP3

Two-tone input power = 0dBm each tone, Δf =

1MHz

41

dBm

RECOMMENDED OPERATING CONDITIONS

RF Input Power1

PIN

f = 3GHz to 70GHz, TCASE = 85°C

Through Path

RF signal is applied to the RFC or through

connected RFx

13

dBm

Hot Switching

RF signal is applied to the RFC while switching

between RFx

13

dBm

1 For 105°C operation, the power handling degrades from the TCASE = 85°C specification by 1dB.