Data Sheet

ADRF5440

Flip Chip, Silicon SP4T Switch, 1GHz to 81GHz

Rev. A

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FEATURES

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Frequency range: 1GHz to 81GHz

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Low insertion loss

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1.9dB typical to 40GHz

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3.0dB typical to 67GHz

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4.0dB typical to 81GHz

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High Isolation

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39dB typical up to 40GHz

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30dB typical up to 67GHz

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20dB typical up to 81GHz

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High input linearity

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P0.1dB: 25dBm typical

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IP3: 47dBm typical

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High RF input power handling

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Through path: 24dBm

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Hot switching: 24dBm

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No low frequency spurs

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CMOS-/LVTTL-compatible

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Fast on time and off time: 25ns

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RF settling time (50% VCTRL to 0.1dB of final RF output): 35ns

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Single-supply operation capability (VDD = 3.3V and VSS = 0V)

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56-ball, 2.390mm × 2.540mm, bumped, bare die sales

APPLICATIONS

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Test and instrumentation

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Cellular infrastructure: 5G mmWave

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Military radios, radars, electronic counter measures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5440 is a reflective, SP4T switch manufactured in the

silicon process. This switch operates from 1GHz to 81GHz with

better than 4.0dB of insertion loss and 20dB of isolation. The

ADRF5440 has an RF input power handling capability of 24dBm for

the through path and 24dBm for hot switching.

The ADRF5440 draws a current of 145µA on the positive supply of

+3.3V and 510µA on negative supply of −3.3V. The device employs

complementary metal-oxide semiconductor (CMOS)-/low voltage

transistor to transistor logic (LVTTL)-compatible controls.

The ADRF5440 can also operate with a single positive supply volt-

age (VDD) applied while the negative supply voltage (VSS) is tied

to ground. The small signal performance is maintained while the

switching characteristics, linearity, and power handling performance

is derated. See Table 2 for more details.

The ADRF5440 RF ports are designed to match a characteristic im-

pedance of 50Ω. The ADRF5440 is 56-ball, 2.390mm × 2.540mm,

bumped bare die sales and can operate from −40°C to +105°C.