SD2931-11 datasheet(1/18 Pages) STMICROELECTRONICS

No. de pieza	SD2931-11

Descripción Electrónicos	RF power transistors HF/VHF/UHF N-channel MOSFETs

PDF	18 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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1 / 18 page

March 2010

Doc ID 17329 Rev 1

1/18

18

SD2931-11

RF power transistors

HF/VHF/UHF N-channel MOSFETs

Features

■ Gold metallization

■ Excellent thermal stability

■ Common source configuration

■ POUT = 150 W min. with 14 dB gain @ 175

MHz

■ Thermally enhanced packaging for lower

junction temperatures

■ GFS and VGS sort marked on unit

Description

The SD2931-11 is a gold metallized N-channel

MOS field-effect RF power transistor. Being

electrically identical to the standard SD2931

MOSFET, it is intended for use in 50 V dc large

signal applications up to 230 MHz.

The SD2931-11 is mechanical compatible to the

SD2931 but offers in addition a better thermal

capability (25% lower thermal resistance),

representing the best-in-class transistors for ISM

applications, where reliability and ruggedness are

critical factors.

Figure 1.

Pin connection

M174

epoxy sealed

1. Drain

2. Source

3. Gate

4. Source

1

3

4

2

Table 1.

Device summary

Order code

Marking

Package

Packing

SD2931-11

M174 epoxy sealed

Tray

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SD2931-11 Datasheet(PDF) 1 Page - STMicroelectronics

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