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STD86N3LH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STD86N3LH5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 16 page ![]() March 2011 Doc ID 15575 Rev 2 1/16 16 STD86N3LH5 N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET™ V Power MOSFET Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ High avalanche ruggedness ■ Low gate drive power losses Application ■ Switching applications – Automotive Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max ID STD86N3LH5 30 V < 0.005 Ω 80 A DPAK 1 3 Table 1. Device summary Order code Marking Package Packaging STD86N3LH5 86N3LH5 DPAK Tape and reel www.st.com |
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