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STD86N3LH5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STD86N3LH5 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() STD86N3LH5 Electrical characteristics Doc ID 15575 Rev 2 5/16 Table 6. Switching on/off (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 15 V, ID = 40 A, RG = 4.7 Ω, VGS = 5 V Figure 15 - 6 14 - ns ns td(off) tf Turn-off delay time Fall time - 23.6 10.8 - ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM (1) 1. Pulse width limited by safe operating area Source-drain current Source-drain current (pulsed) -- 80 320 A A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 40 A, VGS = 0 - - 1.1 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 80 A, di/dt = 100 A/µs, VDD = 20 V Figure 17 - 31.8 26.1 1.6 - ns nC A |
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