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STD86N3LH5 Datasheet(PDF) 3 Page - STMicroelectronics |
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STD86N3LH5 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 16 page ![]() STD86N3LH5 Electrical ratings Doc ID 15575 Rev 2 3/16 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 30 V VDS Drain-source voltage (VGS = 0) @ TJMAX 35 V VGS Gate-source voltage ± 20 V ID (1) 1. Limited by wire bonding Drain current (continuous) at TC = 25 °C 80 A ID Drain current (continuous) at TC = 100 °C 55 A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 320 A PTOT Total dissipation at TC = 25 °C 70 W Derating factor 0.47 W/°C EAS (3) 3. Starting Tj = 25°C, ID = 40 A, VDD = 25 V Single pulse avalanche energy 165 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature 175 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 2.14 °C/W Rthj-pcb (1) 1. When mounted on 1 inch² FR-4 Oz Cu board Thermal resistance junction-pcb max 50 °C/W |
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