STD86N3LH5 datasheet(4/16 Pages) STMICROELECTRONICS

No. de pieza	STD86N3LH5

Descripción Electrónicos	N-channel 30 V, 0.0045 Ohm , 80 A, DPAK STripFET V Power MOSFET

PDF	16 Pages

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Fabricante Electrónico	STMICROELECTRONICS [STMicroelectronics]

Página de inicio	http://www.st.com

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Electrical characteristics

STD86N3LH5

4/16

Doc ID 15575 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20 V

VDS = 20 V,Tc = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

1.8

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 40 A

0.0045

0.005

VGS = 5 V, ID = 40 A

0.0055 0.0065

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

1850

380

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 80 A

VGS = 5 V

Figure 16

6.8

4.7

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD = 15 V, ID = 80 A

VGS = 5 V

Figure 16

2.3

4.5

Gate input resistance

f = 1 MHz gate bias

Bias = 0 test signal

level = 20 mV

open drain

-1.2

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