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STM32G030C6 Datasheet(PDF) 46 Page - STMicroelectronics |
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STM32G030C6 Datasheet(HTML) 46 Page - STMicroelectronics |
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46 / 94 page ![]() Electrical characteristics STM32G030x6/x8 46/94 DS12991 Rev 4 I/O system current consumption The current consumption of the I/O system has two components: static and dynamic. I/O static current consumption All the I/Os used as inputs with pull-up generate current consumption when the pin is externally held low. The value of this current consumption can be simply computed by using the pull-up/pull-down resistors values given in Table 48: I/O static characteristics. For the output pins, any external pull-down or external load must also be considered to estimate the current consumption. Table 28. Current consumption in Stop 1 mode Symbol Parameter Conditions Typ Max(1) Unit RTC VDD 25°C 85°C 25°C 85°C IDD(Stop 1) Supply current in Stop 1 mode Flash memory not powered Disabled 2.4 V 3.4 28 17 130 µA 3 V 3.6 28 22 140 3.6 V 3.9 29 28 155 Enabled (clocked by LSE bypass) 2.4 V 3.9 28 22 140 3 V 4.1 29 23 155 3.6 V 4.6 29 28 160 1. Based on characterization results, not tested in production. Table 29. Current consumption in Standby mode Symbol Parameter Conditions Typ Max(1) Unit General VDD 25°C 85°C 25°C 85°C IDD(Standby) Supply current in Standby mode RTC disabled 2.4 V 1.0 1.8 2.1 14 µA 3.0 V 1.2 2.1 2.7 16 3.6 V 1.4 2.5 3.0 19 RTC enabled, clocked by LSI 2.4 V 1.3 2.1 2.2 17 3.0 V 1.7 2.5 2.9 19 3.6 V 2.1 3.0 3.8 19 1. Based on characterization results, not tested in production. Table 30. Current consumption in VBAT mode Symbol Parameter Conditions Typ Unit RTC VBAT 25°C 85°C IDD_VBAT Supply current in VBAT mode Enabled, clocked by LSE bypass at 32.768 kHz 2.4 V 270 360 nA 3.0 V 360 460 3.6 V 470 600 Enabled, clocked by LSE crystal at 32.768 kHz 2.4 V 410 440 3.0 V 510 530 3.6 V 630 770 |
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