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STM32G030C6 Datasheet(PDF) 70 Page - STMicroelectronics

No. de pieza STM32G030C6
Descripción Electrónicos  Arm® Cortex®-M0 32-bit MCU, up to 64 KB Flash, 8 KB RAM, 2x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
PDF  94 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32G030C6 Datasheet(HTML) 70 Page - STMicroelectronics

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Electrical characteristics
STM32G030x6/x8
70/94
DS12991 Rev 4
Figure 20. ADC accuracy characteristics
Figure 21. Typical connection diagram using the ADC
1. Refer to Table 54: ADC characteristics for the values of RAIN and CADC.
2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the
pad capacitance (refer to Table 48: I/O static characteristics for the value of the pad capacitance). A high
Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.
3. Refer to Table 48: I/O static characteristics for the values of Ilkg.
General PCB design guidelines
Power supply decoupling should be performed as shown in Figure 9: Power supply scheme.
The 100 nF capacitor should be ceramic (good quality) and it should be placed as close as
possible to the chip.
1. Based on characterization results, not tested in production.
2. ADC DC accuracy values are measured after internal calibration.
3. Injecting negative current on any analog input pin significantly reduces the accuracy of A-to-D conversion
of signal on another analog input. It is recommended to add a Schottky diode (pin to ground) to analog pins
susceptible to receive negative current.
4. I/O analog switch voltage booster enabled (BOOSTEN = 1 in the SYSCFG_CFGR1) when VDDA < 2.4 V
and disabled when VDDA ≥ 2.4 V.
MSv19880V3
(1) Example of an actual transfer curve
(2) Ideal transfer curve
(3) End point correlation line
4095
4094
4093
7
6
5
4
3
2
1
0
2
345
6
1
7
4093 4094
4095
ED
1 LSB ideal
(1)
(3)
(2)
EL
ET
EG
EO
Code
(VAIN / VREF+)*4095
ET total unadjusted error: maximum deviation
between the actual and ideal transfer curves.
EG gain error: deviation between the last ideal
transition and the last actual one.
ED differential linearity error: maximum deviation
between actual steps and the ideal ones.
EL integral linearity error: maximum deviation between
any actual transition and the end point correlation line.
EO offset error: maximum deviation between the
first actual transition and the first ideal one.
MS33900V5
Sample and hold ADC converter
12-bit
converter
Cparasitic
(2)
Ilkg
(3)
VT
CADC
VDDA
RAIN
(1)
VAIN
VT
AINx
RADC



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