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STM32G030C6 Datasheet(PDF) 71 Page - STMicroelectronics

No. de pieza STM32G030C6
Descripción Electrónicos  Arm® Cortex®-M0 32-bit MCU, up to 64 KB Flash, 8 KB RAM, 2x USART, timers, ADC, comm. I/Fs, 2.0-3.6V
PDF  94 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STM32G030C6 Datasheet(HTML) 71 Page - STMicroelectronics

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DS12991 Rev 4
71/94
STM32G030x6/x8
Electrical characteristics
79
5.3.18
Temperature sensor characteristics
5.3.19
VBAT monitoring characteristics
5.3.20
Timer characteristics
The parameters given in the following tables are guaranteed by design. Refer to
Section 5.3.14: I/O port characteristics for details on the input/output alternate function
characteristics (output compare, input capture, external clock, PWM output).
Table 57. TS characteristics
Symbol
Parameter
Min
Typ
Max
Unit
TL(1)
VTS linearity with temperature
-
±1
±2
°C
Avg_Slope(2)
Average slope
2.3
2.5
2.7
mV/°C
V30
Voltage at 30°C (±5 °C)(3)
0.742
0.76
0.785
V
tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4)
-8
15
µs
tSTART(1)
Start-up time when entering in continuous mode(4)
-
70
120
µs
tS_temp(1)
ADC sampling time when reading the temperature
5
-
-
µs
IDD(TS)(1)
Temperature sensor consumption from VDD, when
selected by ADC
-4.7
7
µA
1. Guaranteed by design.
2. Based on characterization results, not tested in production.
3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte.
4.
Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.
Table 58. VBAT monitoring characteristics
Symbol
Parameter
Min
Typ
Max
Unit
R
Resistor bridge for VBAT
-39-
kΩ
Q
Ratio on VBAT measurement
-
3
-
-
Er(1)
Error on Q
-10
-
10
%
tS_vbat(1)
ADC sampling time when reading the VBAT
12
-
-
µs
1. Guaranteed by design.
Table 59. VBAT charging characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
RBC
Battery
charging
resistor
VBRS = 0
-
5
-
kΩ
VBRS = 1
-
1.5
-



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