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RT8800AGQV Datasheet(PDF) 17 Page - Richtek Technology Corporation

No. de pieza RT8800AGQV
Descripción Electrónicos  General Purpose 3-Phase PWM Controller for High-Density Power Supply
PDF  21 Pages
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Fabricante Electrónico  RICHTEK [Richtek Technology Corporation]
Página de inicio  http://www.richtek.com
Logo RICHTEK - Richtek Technology Corporation

RT8800AGQV Datasheet(HTML) 17 Page - Richtek Technology Corporation

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RT8800A
17
DS8800A-04 August 2007
www.richtek.com
All brand name or trademark belong to their owner respectively
Layout Guide
Place the high-power switching components first, and separate them from sensitive nodes.
1. Most critical path:
The current sense circuit is the most sensitive part of the converter. The current sense resistors tied to ISP1,2,3 and
ICOMMON should be located not more than 0.5 inch from the IC and away from the noise switching nodes. The PCB
trace of sense nodes should be parallel and as short as possible. R&C filter of choke should place close to PWM and
the R & C connect directly to the pin of each output choke, use 10 mil differencial pair, and 20 mil gap to other phase
pair. Less via as possible.
2. Switching ripple current path:
a. Input capacitor to high side MOSFET.
b. Low side MOSFET to output capacitor.
c. The return path of input and output capacitor.
d. Separate the power and signal GND.
e. The switching nodes (the connection node of high/low side MOSFET and inductor) is the most noisy points.Keep
them away from sensitive small-signal node.
f . Reduce parasitic R, L by minimum length, enough copper thickness and avoiding of via.
3. MOSFET driver should be closed to MOSFET.
Figure 18. Power Stage Ripple Current Path
SW2
L2
SW1
L1
C
OUT
R
L
V
OUT
V
IN
R
IN
C
IN
V



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