S25FL128SDPNFAQ datasheet(5/149 Pages) CYPRESS

5 / 149 page

Document Number: 001-98283 Rev. *M

Page 4 of 148

S25FL128S/S25FL256S

Overview

1.1

General Description

The Cypress S25FL128S and S25FL256S devices are flash non-volatile memory products using:



MirrorBit technology - that stores two data bits in each memory array transistor



Eclipse architecture - that dramatically improves program and erase performance



65 nm process lithography

This family of devices connect to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and

output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands.

This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for Double Data Rate (DDR)

read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock.

The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to

be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase

algorithms.

Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates

supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface,

asynchronous, NOR flash memories while reducing signal count dramatically.

The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety

of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FL128SDPNFAQ Datasheet(PDF) 5 Page - Cypress Semiconductor