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S25FL128SDPNFAQ Datasheet(PDF) 84 Page - Cypress Semiconductor

No. de pieza S25FL128SDPNFAQ
Descripción Electrónicos  128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)
PDF  149 Pages
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Fabricante Electrónico  CYPRESS [Cypress Semiconductor]
Página de inicio  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S25FL128SDPNFAQ Datasheet(HTML) 84 Page - Cypress Semiconductor

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Document Number: 001-98283 Rev. *M
Page 83 of 148
S25FL128S/S25FL256S
9.3.16 Write VDLR (WVDLR 4Ah)
Before the Write VDLR (WVDLR) command can be accepted by the device, a Write Enable (WREN) command must be issued and
decoded by the device. After the Write Enable (WREN) command has been decoded successfully, the device will set the Write
Enable Latch (WEL) to enable WVDLR operation.
The WVDLR command is entered by shifting the instruction and the data byte on SI.
CS# must be driven to the logic high state after the eighth (8th) bit of data has been latched. If not, the WVDLR command is not
executed. As soon as CS# is driven to the logic high state, the WVDLR operation is initiated with no delays. The maximum clock
frequency for the PNVDLR command is 133 MHz.
Figure 60. Write VDLR (WVDLR) Command Sequence
9.3.17 Data Learning Pattern Read (DLPRD 41h)
The instruction is shifted on SI, then the 8-bit DLP is shifted out on SO. It is possible to read the DLP continuously by providing
multiples of eight clock cycles. The maximum operating clock frequency for the DLPRD command is 133 MHz.
Figure 9.5 DLP Read (DLPRD) Command Sequence
IInstruction
Data Learning Pattern
1
3
2
10
9
8
7
6
5
4
0
14
13
12
15
0
1
7
6
5
3
2
SCK
SI
SO
MSB
High Impedance
CS
0
1
7
6
5
4
3
2
MSB
4
11
#
IInstruction
Data Learning Pattern
1
3
2
10
9
8
7
6
5
4
0
14
13
12
15
0
1
7
6
5
3
2
SCK
SI
SO
MSB
High Impedance
CS
0
1
7
6
5
4
3
2
MSB
4
11
Data Learning Pattern
18
17
16
22
21
20
23
0
1
7
6
5
3
2
MSB
4
19
#



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