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74LVC161DB Datasheet(PDF) 7 Page - Nexperia B.V. All rights reserved |
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74LVC161DB Datasheet(HTML) 7 Page - Nexperia B.V. All rights reserved |
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7 / 22 page ![]() 74LVC161 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 6 — 30 September 2013 7 of 22 NXP Semiconductors 74LVC161 Presettable synchronous 4-bit binary counter; asynchronous reset 6. Functional description [1] * = the TC output is HIGH when CET is HIGH and the counter is at terminal count (HHHH) H = HIGH voltage level h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition L = LOW voltage level l = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition q = lower case letters indicate the state of the referenced output one set-up time prior to the LOW-to-HIGH clock transition X = don’t care = LOW-to-HIGH clock transition 7. Limiting values [1] The minimum input voltage ratings may be exceeded if the input current ratings are observed. [2] The output voltage ratings may be exceeded if the output current ratings are observed. [3] For SO16 packages: above 70 C the value of P D derates linearly with 8 mW/K. For (T)SSOP16 packages: above 60 C the value of P D derates linearly with 5.5 mW/K. For DHVQFN16 packages: above 60 C the value of P D derates linearly with 4.5 mW/K. Table 3. Function table[1] Operating modes Input Output MR CP CEP CET PE Dn Qn TC Reset (clear) L X XXX XL L Parallel load H XXl l L L H XXl h H * Count H hhh X count * Hold (do nothing) HX l X h X qn * HX X l h X qn L Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage 0.5 +6.5 V IIK input clamping current VI <0 50 - mA VI input voltage [1] 0.5 +6.5 V IOK output clamping current VO >VCC or VO <0 - 50 mA VO output voltage [2] 0.5 VCC +0.5 V IO output current VO =0V to VCC - 50 mA ICC supply current - 100 mA IGND ground current 100 - mA Tstg storage temperature 65 +150 C Ptot total power dissipation Tamb = 40 C to +125 C [3] -500 mW |
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