BLF177 datasheet(3/19 Pages) NXP

No. de pieza	BLF177

Descripción Electrónicos	HF/VHF power MOS transistor

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Fabricante Electrónico	NXP [NXP Semiconductors]

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NXP Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VDS

drain-source voltage

−

125

VGS

gate-source voltage

−±20

drain current (DC)

−

Ptot

total power dissipation

Tmb ≤ 25 °C

−

220

Tstg

storage temperature

−65

+150

°C

junction temperature

−

200

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-mb

thermal resistance from junction to mounting base

max. 0.8

K/W

Rth mb-h

thermal resistance from mounting base to heatsink

max. 0.2

K/W

handbook, halfpage

102

10−1

MRA906

110

VDS (V)

(A)

102

103

(1)

(2)

Fig.2 DC SOAR.

(1) Current in this area may be limited by RDSon.

(2) Tmb =25 °C.

handbook, halfpage

300

200

100

(2)

(1)

100

150

MGP089

Ptot

(W)

Th (°C)

Fig.3 Power derating curves.

(1) Short-time operation during mismatch.

(2) Continuous operation.

Rev. 06 - 24 January 2007

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