BLF177 datasheet(5/19 Pages) NXP

No. de pieza	BLF177

Descripción Electrónicos	HF/VHF power MOS transistor

PDF	19 Pages

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Fabricante Electrónico	NXP [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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NXP Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

handbook, halfpage

−5

MGP090

10−1

110

10−2

−4

−3

−2

−1

ID (A)

T.C.

(mV/K)

Fig.4

Temperature coefficient of gate-source

voltage as a function of drain current; typical

values.

VDS = 10 V; valid for Th =25to70 °C.

handbook, halfpage

510

MGP091

(A)

VGS (V)

Fig.5

Drain current as a function of gate-source

voltage; typical values.

VDS =10V.

handbook, halfpage

400

300

200

100

150

MGP092

RDSon

Ω)

Tj (°C)

Fig.6

Drain-source on-state resistance as a

function of junction temperature; typical

values.

ID = 5 A; VGS =10V.

handbook, halfpage

1200

800

400

Cis

Cos

VDS (V)

(pF)

MBK408

Fig.7

Input and output capacitance as functions

of drain-source voltage; typical values.

VGS = 0; f = 1 MHz.

Rev. 06 - 24 January 2007

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