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BLF177 Datasheet(PDF) 10 Page - NXP Semiconductors |
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BLF177 Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 19 page ![]() NXP Semiconductors Product specification HF/VHF power MOS transistor BLF177 handbook, halfpage 0 10 5 0 −5 10 20 30 MGP099 Zi ( Ω) ri xi f (MHz) Fig.14 Input impedance as a function of frequency (series components); typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω. handbook, halfpage 0 30 20 10 0 10 20 30 MGP100 Gp (dB) f (MHz) Fig.15 Power gain as a function of frequency; typical values. Class-AB operation; VDS = 50 V; IDQ = 0.7 A; PL = 150 W (PEP); RGS = 6.25 Ω; RL = 6.25 Ω. APPLICATION INFORMATION FOR CLASS-B OPERATION RF performance in CW operation in a common source class-B test circuit (see Fig.19). Th =25 °C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ω unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) η D (%) CW, class-B 108 50 0.1 150 typ. 19 typ. 70 Rev. 06 - 24 January 2007 10 of 19 |
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