BLF177 datasheet(6/19 Pages) NXP

6 / 19 page

NXP Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

handbook, halfpage

300

200

100

MGP093

Crs

(pF)

VDS (V)

Fig.8

Feedback capacitance as a function of

drain-source voltage; typical values.

VGS = 0; f = 1 MHz.

APPLICATION INFORMATION FOR CLASS-AB OPERATION

RF performance in SSB operation in a common source class-AB test circuit (see Fig.13).

Th =25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz unless otherwise speciﬁed.

Note

1. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope

power the values should be decreased by 6 dB.

Ruggedness in class-AB operation

The BLF177 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the

following conditions: f = 28 MHz; VDS = 50 V at rated output power.

MODE OF

OPERATION

(MHz)

VDS

(V)

IDQ

(A)

(W)

(dB)

(%)

(dB)

(note 1)

(dB)

(note 1)

SSB, class-AB

0.7

20 to 150

(PEP)

>20

typ. 35

>35

typ. 40

<−30

typ.

−35

<−30

typ.

−38

Rev. 06 - 24 January 2007

6 of 19

BLF177 Datasheet(PDF) 6 Page - NXP Semiconductors

BLF177 Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

Datasheet Descarga

Enlace URL