BLF177 datasheet(7/19 Pages) NXP

7 / 19 page

NXP Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

handbook, halfpage

100

200

MGP096

(dB)

PL (W) PEP

Fig.9

Power gain as a function of load power;

typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS =5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

100

200

MGP094

ηD

(%)

PL (W) PEP

Fig.10 Two tone efficiency as a function of load

power; typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS =5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

−20

−40

−30

−50

−60

100

200

MGP097

(dB)

PL (W) PEP

Fig.11 Third order intermodulation distortion as a

function of load power; typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS =5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

−20

−40

−30

−50

−60

100

200

MGP098

(dB)

PL (W) PEP

Fig.12 Fifth order intermodulation distortion as a

function of load power; typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS =5 Ω; f1 = 28.000 MHz; f2 = 28.001 MHz.

Rev. 06 - 24 January 2007

7 of 19

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