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MPC8569E Datasheet(PDF) 46 Page - Freescale Semiconductor, Inc

No. de pieza MPC8569E
Descripción Electrónicos  MPC8569E PowerQUICC III
PDF  127 Pages
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Fabricante Electrónico  FREESCALE [Freescale Semiconductor, Inc]
Página de inicio  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

MPC8569E Datasheet(HTML) 46 Page - Freescale Semiconductor, Inc

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MPC8569E PowerQUICC III Integrated Processor Hardware Specifications, Rev. 1
DDR2 and DDR3 SDRAM Controller
Freescale Semiconductor
46
2.4.1
DDR2 and DDR3 SDRAM Interface DC Electrical Characteristics
The following table provides the recommended operating conditions for the DDR SDRAM controller when interfacing to
DDR2 SDRAM.
The following table provides the recommended operating conditions for the DDR SDRAM controller when interfacing to
DDR3 SDRAM.
Table 13. DDR2 SDRAM Interface DC Electrical Characteristics
At recommended operating condition with GVDD =1.8 V
1
Parameter
Symbol
Min
Max
Unit
Notes
I/O reference voltage
MVREFn
0.49
× GV
DD
0.51
× GV
DD
V2, 3, 4
Input high voltage
VIH
MVREFn +0.125
V
5
Input low voltage
VIL
MVREFn – 0.125
V
5
Output high current (VOUT =1.320 V)
IOH
—–13.4
mA
6, 7
Output low current (VOUT =0.380 V)
IOL
13.4
mA
6, 7
I/O leakage current
IOZ
–50
50
μA8
Notes:
1. GVDD is expected to be within 50 mV of the DRAM’s voltage supply at all times. The DRAM’s and memory controller’s voltage
supply may or may not be from the same source.
2. MVREFn is expected to be equal to 0.5
× GV
DD and to track GVDD DC variations as measured at the receiver. Peak-to-peak
noise on MVREFn may not exceed the MVREFn DC level by more than ±2% of GVDD (that is, ± 36 mV).
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made, and it is expected to be
equal to MVREFn with a min value of MVREFn – 0.04 and a max value of MVREFn +0.04. VTT should track variations in the
DC level of MVREFn.
4. The voltage regulator for MVREFn must meet the specifications stated in Table 16.
5. Input capacitance load for DQ, DQS, and DQS are available in the IBIS models.
6. IOH and IOL are measured at GVDD = 1.7 V.
7. Refer to the IBIS model for the complete output IV curve characteristics.
8. Output leakage is measured with all outputs disabled, 0 V
V
OUT GVDD.
Table 14. DDR3 SDRAM Interface DC Electrical Characteristics
At recommended operating condition with GVDD =1.5 V
1
Parameter
Symbol
Min
Max
Unit
Note
I/O reference voltage
MVREFn
0.49
× GV
DD
0.51
× GV
DD
V2, 3, 4



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