DMC3025LSD

Document number: DS35717 Rev. 7 - 2

6 of 10

www.diodes.com

February 2015

© Diodes Incorporated

DMC3025LSD

0.005

0.015

0.025

0.035

0.010

0.020

0.030

0.040

0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 7. On-Resistance Variation with Temperature

J

°

V

= 4.5V

I = 5A

GS

D

V

=

V

I = 10A

GS

D

10

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.0

1.0

0

-50

-25

0

25

50

75

100

125

150

T , JUNCTION TEMPERATURE ( C)

Figure 8 Gate Threshold Variation vs. Ambient Temperature

J

°

I = 1mA

D

I = 250µA

D

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1.0

1.2

V

, SOURCE-DRAIN VOLTAGE (V)

SD

Figure 9. Diode Forward Voltage vs. Current

T = 25°C

A

0

5

10

15

20

25

30

V

, DRAIN-SOURCE VOLTAGE (V)

DS

Figure 10. Typical Junction Capacitance

10

100

1,000

10,000

f = 1MHz

0

2

4

6

8

10

12

Q

(nC)

Figure 11. Gate Charge

V

= 15V

I =

A

DS

D

10

0.1

1

10

100

V

, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

DS

0.01

0.1

1

10

100

R

Limited

DS(on)

DC

P

= 10s

W

P

= 100ms

W

P

= 10ms

W

P

= 1ms

W

P

= 100µs

W

P

= 10 s

W

µ

T

= 150°C

T = 25°C

J(max)

A

Single Pulse

P

= 1s

W