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DMC3025LSD Datasheet(PDF) 2 Page - Diodes Incorporated

No. de pieza DMC3025LSD
Descripción Electrónicos  30V COMPLEMENTARY ENHANCEMENT MODE MOSFET
PDF  10 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3025LSD Datasheet(HTML) 2 Page - Diodes Incorporated

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DMC3025LSD
Document number: DS35717 Rev. 7 - 2
2 of 10
www.diodes.com
February 2015
© Diodes Incorporated
DMC3025LSD
Maximum Ratings N-CHANNEL– Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
6.5
5.1
A
t<10s
TA = +25°C
TA = +70°C
ID
8.5
6.8
A
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
5.3
4.1
A
t<10s
TA = +25°C
TA = +70°C
ID
7.0
5.5
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
60
A
Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)
ISM
60
A
Avalanche Current (Note 7) L = 0.1mH
IAS
14
A
Avalanche Energy (Note 7) L = 0.1mH
EAS
10
mJ
Maximum Ratings P-CHANNEL– Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 5) VGS = -10V
Steady
State
TA = +25°C
TA = +70°C
ID
-4.2
-3.2
A
t<10s
TA = +25°C
TA = +70°C
ID
-5.5
-4.3
A
Continuous Drain Current (Note 5) VGS = -4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
-3.5
-2.3
A
t<10s
TA = +25°C
TA = +70°C
ID
-4.1
-3.2
A
Maximum Continuous Body Diode Forward Current (Note 5)
IS
-2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
IDM
-30
A
Pulsed Body Diode Current (10µs pulse, duty cycle = 1%)
ISM
-30
A
Avalanche Current (Note 7) L = 0.1mH
IAS
-14
A
Avalanche Energy (Note 7) L = 0.1mH
EAS
10
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 6)
TA = +25°C
PD
1.2
W
TA = +70°C
0.77
Thermal Resistance, Junction to Ambient (Note 6)
Steady State
RθJA
104
°C/W
t<10s
62
Total Power Dissipation (Note 5)
TA = +25°C
PD
1.5
W
TA = +70°C
0.95
Thermal Resistance, Junction to Ambient (Note 5)
Steady State
RθJA
83
°C/W
t<10s
49
Thermal Resistance, Junction to Case (Note 5)
RθJC
15
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.



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