DMC3025LSD datasheet(3/10 Pages) DIODES

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DMC3025LSD

Document number: DS35717 Rev. 7 - 2

3 of 10

www.diodes.com

February 2015

DMC3025LSD

Electrical Characteristics N-CHANNEL– Q2 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

—

VGS = 0V, ID = 250µA

Zero Gate Voltage Drain Current

IDSS

—

VDS = 30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±1

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

1.0

—

2.0

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS (ON)

—

VGS = 10V, ID = 7.4A

—

VGS = 4.5V, ID = 6A

Forward Transfer Admittance

|Yfs|

—

VDS = 5V, ID = 10A

Diode Forward Voltage

VSD

—

0.70

1.2

VGS = 0V, IS = 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

501

—

VDS = 15V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

1.84

—

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

4.6

—

VDS = 15V, ID = 10A

Total Gate Charge (VGS = 10V)

—

9.8

—

Gate-Source Charge

Qgs

—

1.6

—

Gate-Drain Charge

Qgd

—

2.0

—

Turn-On Delay Time

tD(on)

—

3.9

—

VDD = 15V, VGS = 10V,

RG = 6 , ID = 1A

Turn-On Rise Time

—

4.2

—

Turn-Off Delay Time

tD(off)

—

16.6

—

Turn-Off Fall Time

—

5.8

—

Reverse Recovery Time

trr

—

5.5

—

IF = 12A, di/dt = 500A/µs

Reverse Recovery Charge

Qrr

—

2.6

—

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