DMC3025LSD datasheet(4/10 Pages) DIODES

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DMC3025LSD

Document number: DS35717 Rev. 7 - 2

4 of 10

www.diodes.com

February 2015

DMC3025LSD

Electrical Characteristics P-CHANNEL – Q1 (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-30

—

VGS = 0V, ID = -250µA

Zero Gate Voltage Drain Current

IDSS

—

-1

VDS = -30V, VGS = 0V

Gate-Source Leakage

IGSS

—

±100

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(th)

-1.0

—

-2.0

VDS = VGS, ID = -250µA

Static Drain-Source On-Resistance

RDS (ON)

—

VGS = -10V, ID = -5.2A

—

VGS = -4.5V, ID = -4A

Forward Transfer Admittance

|Yfs|

—

VDS = -5V, ID = -5.2A

Diode Forward Voltage

VSD

—

-0.7

-1.2

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

590

—

VDS = -25V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

Reverse Transfer Capacitance

Crss

—

Gate Resistance

—

VDS = 0V, VGS = 0V, f = 1.0MHz

Total Gate Charge (VGS = 4.5V)

—

5.1

—

VDS = -15V, ID = -6A

Total Gate Charge (VGS = 10V)

—

10.5

—

Gate-Source Charge

Qgs

—

1.8

—

Gate-Drain Charge

Qgd

—

1.9

—

Turn-On Delay Time

tD(on)

—

6.8

—

VDD = -15V, VGS = -10V,

RG = 6 , ID = -1A

Turn-On Rise Time

—

4.9

—

Turn-Off Delay Time

tD(off)

—

28.4

—

Turn-Off Fall Time

—

12.4

—

Reverse Recovery Time

trr

—

IF = 12A, di/dt = 500A/µs

Reverse Recovery Charge

Qrr

—

Notes:

7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.

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