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CS9211 Datasheet(PDF) 31 Page - National Semiconductor (TI) |
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CS9211 Datasheet(HTML) 31 Page - National Semiconductor (TI) |
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31 / 62 page ![]() Revision 2.1 31 www.national.com Functional Description (Continued) 3.2.7 User-defined Dither Patterns The CS9211 allows the user to define custom dither pat- terns, should the pre-programmed patterns prove to be insufficient. As shown in Table 3-13, this memory is accessed through Offset 424h (control and address) and 428h (data). The dither RAM structure is 32 columns x 64 rows, in which each column represents one 8x8 dither pattern matrix, like oneofthe matrices showninFigure 3-10. Thefirst row of the 8x8 matrix goes into rows 0 - 7 of the appropriate col- umn, with the left-most bit going into row 0 or the column, and the right-most bit going into row 7 of the column. The second row goes into rows 8-15 of the same column, and so on until the eighth row of the 8x8 matrix goes into rows 48-63 of the column. This structure is illustrated in Figure 3-11. Figure 3-11. Dither Ram Structure The dither RAM is loaded row by row, not column by col- umn, so the user must write out each matrix in a column, then convert the resulting rows to the data to be loaded, via Offset 424h and 428h. Offset 424 points to the row to be loaded, and offset 428h supplies the data to the row. Looking back at Figure 3-9, it is apparent that the dither patterns associated with Cases 1) and 3) are logical inverses of each other, thereby precluding the need to store both of them in the RAM. Data is read back from the dither RAM either inverted or non-inverted, according to the MSB of the dither bits. If the MSB of the dither bits is one, data will be read from the dither RAM as inverted data. The user who chooses to define custom dither pat- terns must maintain inverse dither pattern pairs or else their patterns will not work correctly. Table 3-12 indicates which 8x8 matrices go into which col- umns of the dither RAM. The entries in Table 3-12 are a fractional form of notation employed to identify the matrix. As showninFigure3-10, the 8x8 matrices aremadeupof smaller matrices that are replicated to fill out the 8x8 matrix. The notations in Table 3-12 refer to the smaller matrices (sub-matrices) from which the 8x8 matrices are built. The fractional notation in Table 3-12 identifies a smaller matrix (sub-matrix) by using a denominator which refers to the number of squares in the sub-matrix, and a numerator which refers to the number of “1” entries in a given matrix. Thus the notation “7/8” refers to a 2 x 4 matrix (from the 3- bit dithering scheme) which contains 7 ones. Table 3-12 does not contain all possible ‘fractional’ entries for a given dithering scheme. For instance, in the 3-bit schemes, there is no entry for the “1/8” matrix. The “1/8” matrix (being a 2x4 matrix which contains a single 1) would be the logical inverse of the “7/8” matrix, hence, storing the 1/8 matrix is unnecessary. Similarly, the “2/8” matrix is the inverse of the “6/8” matrix, and the “3/8” matrix is the inverse of the “5/8” matrix. The matrices that are not stored directly are accessed when the most-significant dither bit is a 1. An exception is the “0/n” matrix, which contains no ones. It is stored in INVERSE FORM in column 0, since there is no stored “n/n” matrix to read the inverse of. The “I” after any fractional designation in the column 0 and 16 entries entries of Table 3-12 indicates this matrix should be stored in inverse form. 8x8 matrix 01 2 30 31 0 1 Columns 63 543210 0 0 1 1 1 1 1 1 Offset 424h (row pointer) Rows Dither RAM Table 3-12. Dither RAM Column Usage Column Number of Dither Bits 12 3 4 5 00/2 I 0/4 I 0/8 I 0/16 I 0/32 I 1 2 31/32 3 4 15/16 30/32 5 6 29/32 7 8 7/8 14/16 28/32 9 10 27/32 11 12 13/16 26/32 13 14 25/32 15 16 3/4 I 6/8 I 12/16 I 24/32 I 17 18 23/32 19 20 11/16 22/32 21 22 21/32 23 24 5/8 10/16 20/32 25 26 19/32 27 28 9/16 18/32 29 30 17/32 31 1/2 2/4 4/8 8/16 16/32 |
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