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LTM4650 Datasheet(PDF) 12 Page - Analog Devices |
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LTM4650 Datasheet(HTML) 12 Page - Analog Devices |
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12 / 138 page  LTM4664A 12 Rev. 0 For more information www.analog.com ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified internal operating temperature range (Note 1, 2, 3). Specified as each individual output channel designated with n (Note 3). TA = 25°C, VINS3 = 12V, RUN_Cn = 3.3V, EXTVCC = 0V, FREQUENCY_SWITCH = 350kHz and VOUTCn commanded to 1.000V unless otherwise noted. Configured with factory default EEPROM settings, unless otherwise noted. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS VDD33 Regulator VDD33 Internal VDD33 Voltage 4.5V < VINTVCC or 4.8V < VEXTVCC 3.2 3.3 3.4 V ILIM VDD33 Current Limit VDD33 = GND, VIN = INTVCC = 4.5V 100 mA VDD33_OV VDD33 Overvoltage Threshold (Note 10) 3.5 V VDD33_UV VDD33 Undervoltage Threshold (Note 10) 3.1 V VDD25 Regulator VDD25 Internal VDD25 Voltage 2.5 V LIM VDD25 Current Limit VDD25 = GND, VIN = INTVCC = 4.5V 80 mA Oscillator and Phase-Locked Loop fRANGE PLL SYNC Range Synchronized with Falling Edge of SYNC l 250 1000 kHz fOSC Oscillator Frequency Accuracy Frequency Switch = 250.0kHz to 1000.0kHz (Note 10) l ±7.5 % VTH(SYNC) SYNC Input Threshold VSYNC Falling VSYNC Rising 1 1.5 V V VOL(SYNC) SYNC Low Output Voltage ILOAD = 3mA 0.2 0.4 V ILEAK(SYNC) SYNC Leakage Current in Slave Mode 0V ≤ VPIN ≤ 3.6V ±5 µA θSYNC-θ0 SYNC to Ch0 Phase Relationship Based on the Falling Edge of Sync and Rising Edge of SWC0) MFR_PWM_CONFIG[2:0] = 0,2,3 MFR_PWM_CONFIG[2:0] = 5 MFR_PWM_CONFIG[2:0] = 1 MFR_PWM_CONFIG[2:0]= 4,6 (Note 10) 0 60 90 120 Deg Deg Deg Deg θSYNC-θ1 SYNC to Ch1 Phase Relationship Based on the Falling Edge of Sync and Rising Edge of SWC1 MFR_PWM_CONFIG[2:0] = 3 MFR_PWM_CONFIG[2:0] = 0 MFR_PWM_CONFIG[2:0] = 2,4,5 MFR_PWM_CONFIG[2:0] = 1 MFR_PWM_CONFIG[2:0] = 6 (Note 10) 120 180 240 270 300 Deg Deg Deg Deg Deg EEPROM Characteristics Endurance (Notes 15, 16) 0°C < TJ < 85°C EEPROM Write Operations l 10,000 Cycles Retention (Notes 15, 16) TJ < 125°C l 10 Years Mass_Write Mass Write Operation Time STORE_USER_ALL, 0°C < TJ < 85°C During EEPROM Write Operation l 440 4100 ms Input Leakage Current SDA, SCL, ALERT, RUN IOL Input Leakage Current OV ≤ VPIN ≤ 5.5V l ±5 µA Leakage Current FAULTn, PGOOD_Cn ILEAK Input Leakage Current OV ≤ VPIN ≤ 3.6V l ±2 µA Digital Inputs SCL, SDA, RUN_Cn, FAULT_Cn (Note 10) VIH Input High Threshold Voltage l 1.35 V VIL Input Low Threshold Voltage l 0.8 V VHYST Input Hysteresis SCL, SDA 0.08 V CPIN Input Capacitance 10 pF Digital Input WP (Note 10) IPUWP Input Pull-Up Current WP 10 µA Open-Drain Outputs SCL, SDA, FAULT_Cn, ALERT, RUN_Cn, SHARE_CLK, PGOOD_Cn VOL Output Low Voltage ISINK = 3mA 0.4 V |
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