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BLF177 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF177 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 16 page ![]() September 1992 5 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 5 A; VGS = 10 V. handbook, halfpage 0 400 300 200 100 50 100 150 MGP092 RDS(on) (m Ω) Tj (°C) Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 1200 800 400 0 20 40 Cis Cos 60 VDS (V) C (pF) MBK408 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 300 200 100 0 10 50 20 30 40 MGP093 Crs (pF) VDS (V) |
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