BLF177 datasheet(6/16 Pages) PHILIPS

6 / 16 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

APPLICATION INFORMATION FOR CLASS-AB OPERATION

Th = 25 °C; Rth mb-h = 0.2 K/W; ZL = 6.25 + j0 Ω unless otherwise speciﬁed.

RF performance in SSB operation in a common source class-AB circuit.

f1 = 28.000 MHz; f2 = 28.001 MHz.

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

MODE OF

OPERATION

(MHz)

VDS

(V)

IDQ

(A)

(W)

(dB)

ηD

(%)

(dB)

(note 1)

(dB)

(note 1)

SSB, class-AB

0.7

20 to 150

(PEP)

> 20

typ. 35

> 35

typ. 40

<−30

typ.

−35

<−30

typ.

−38

Ruggedness in class-AB operation

The BLF177 is capable of withstanding a load mismatch

corresponding to VSWR = 50 through all phases under the

following conditions:

VDS = 50 V; f = 28 MHz at rated output power.

Fig.9

Power gain as a function of load power,

typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

100

200

MGP096

(dB)

PL (W) PEP

Fig.10 Two tone efficiency as a function of load

power, typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

100

200

MGP094

ηD

(%)

PL (W) PEP

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