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BLF177 Datasheet(PDF) 10 Page - NXP Semiconductors |
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BLF177 Datasheet(HTML) 10 Page - NXP Semiconductors |
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10 / 16 page ![]() September 1992 10 Philips Semiconductors Product specification HF/VHF power MOS transistor BLF177 APPLICATION INFORMATION FOR CLASS-B OPERATION Th = 25 °C; Rth mb-h = 0.2 K/W; RGS = 15.8 Ω; unless otherwise specified. RF performance in CW operation in a common source class-B test circuit. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) GP (dB) ηD (%) CW, class-B 108 50 0.1 150 typ. 19 typ. 70 Fig.16 Power gain as a function of load power, typical values. Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 Ω; f = 108 MHz. handbook, halfpage 0 100 200 30 10 0 20 MGP101 Gp (dB) PL (W) Fig.17 Two tone efficiency as a function of load power, typical values. Class-B operation; VDS = 50 V; IDQ = 100 mA; RGS = 15.8 Ω; f = 108 MHz. handbook, halfpage 0 100 50 0 100 200 MGP102 η (%) PL (W) |
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