BLF177 datasheet(7/16 Pages) PHILIPS

No. de pieza	BLF177

Descripción Electrónicos	HF/VHF power MOS transistor

PDF	16 Pages

Scroll/Zoom	100%

Fabricante Electrónico	PHILIPS [NXP Semiconductors]

Página de inicio	http://www.nxp.com

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7 / 16 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF/VHF power MOS transistor

BLF177

Fig.11 Third order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

−20

−40

−30

−50

−60

100

200

MGP097

(dB)

PL (W) PEP

Fig.12 Fifth order intermodulation distortion as a

function of load power, typical values.

Class-AB operation; VDS = 50 V; IDQ = 0.7 A;

RGS = 5 Ω;f1 = 28.000 MHz; f2 = 28.001 MHz.

handbook, halfpage

−20

−40

−30

−50

−60

100

200

MGP098

(dB)

PL (W) PEP

Fig.13 Test circuit for class-AB operation.

f = 28 MHz.

handbook, full pagewidth

MGP095

input

Ω

D.U.T.

+VG

C13

C10

C11

C12

C15

+VD

C14

output

Ω

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