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VN5E160AS-E Datasheet(PDF) 8 Page - STMicroelectronics |
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VN5E160AS-E Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 37 page ![]() Electrical specifications VN5E160AS-E 8/37 Doc ID 15609 Rev 4 2.2 Thermal data EMAX Maximum switching energy (single pulse) (L = 8 mH; RL = 0 Ω; Vbat = 13.5 V; Tjstart = 150 °C; IOUT = IlimL(Typ.) ) 36 mJ VESD Electrostatic discharge (human body model: R = 1.5 K Ω; C = 100 pF) –IN –CS –CS_DIS –OUT –VCC 4000 2000 4000 5000 5000 V V V V V VESD Charge device model (CDM-AEC-Q100-011) 750 V Tj Junction operating temperature -40 to 150 °C Tstg Storage temperature -55 to 150 °C Table 3. Absolute maximum ratings (continued) Symbol Parameter Value Unit Table 4. Thermal data Symbol Parameter Max value Unit Rthj-pins Thermal resistance junction-pins 30 °C/W Rthj-amb Thermal resistance junction-ambient See Figure 36 °C/W |
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