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ELANSC310 Datasheet(PDF) 94 Page - Advanced Micro Devices

No. de pieza ELANSC310
Descripción Electrónicos  Single-Chip, 32-Bit, PC/AT Microcontroller
PDF  119 Pages
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

ELANSC310 Datasheet(HTML) 94 Page - Advanced Micro Devices

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94
Élan™SC310 Microcontroller Data Sheet
PREL IMINARY
Table 47.
DRAM First Cycle Read Access (See Figure 38)
Notes:
For more information about DRAM first cycle read wait states, see the DRAM First Cycle Wait State Select Logic table in
Chapter 4 of the ÉlanTMSC310 Microcontroller Programmer’s Reference Manual, order #20665.
Symbol
Parameter Description
Wait States
Min
Max
Unit
t5a
CAS Low to data valid (read access time)
120
ns
250
ns
380
ns
t28a
RAS Low to data valid (read access time)
150
ns
280
ns
3
110
ns
t30
MA valid setup to RAS Low
N/A
0
ns
t31
MA hold from RAS Low
N/A
10
ns
t32
MA setup to CAS Low
N/A
0
ns
t33
RAS hold from CAS Low
N/A
20
ns
t34
RAS precharge from CAS High
N/A
10
ns
t38
MA hold from CAS active
N/A
15
ns
t39
RAS to CAS delay
N/A
20
ns
t40
RAS pulse width
N/A
70
10,000
ns
t41a
CAS pulse width (read, first cycle)
130
ns
260
ns
390
ns
t44a
CAS hold from RAS Low
160
ns
290
ns
3
120
ns
Table 48.
DRAM Bank/Page Miss Read Cycles (See Figure 38)
Symbol
Parameter Description
Wait State
Min
Max
Unit
t5b
CAS Low to data valid (read access time)
335
ns
465
ns
580
ns
t28b
RAS Low to data valid (read access time)
365
ns
495
ns
5
110
ns
t29a
CAS precharge (page miss read)
N/A
30
ns
t33
RAS hold from CAS Low
N/A
20
ns
t34
RAS precharge from CAS High
N/A
10
ns
t36
RAS precharge (page miss)
338
ns
438
ns
553
ns
t39
RAS to CAS delay
N/A
20
ns
t40
RAS pulse width
N/A
70
10,000
ns
t41b
CAS pulse width (read, page miss)
345
ns
475
ns
590
ns



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