GP200MHS12

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

1/10

www.dynexsemi.com

FEATURES

s

Non Punch Through Silicon

s

Isolated Copper Baseplate

s

Low Inductance Internal Construction

APPLICATIONS

s

High Power Inverters

s

Motor Controllers

s

Induction Heating

s

Resonant Converters

The Powerline range of high power modules includes half

bridge and single switch configurations covering voltages from

600V to 3300V and currents up to 4800A.

The GP200MHS12 is a half bridge 1200V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) ensuring reliability in demanding applications.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP200MHS12

Note: When ordering, please use the whole part number.

KEY PARAMETERS

V

CES

1200V

V

CE(sat)

(typ)

2.7V

I

C

(max)

200A

I

C(PK)

(max)

400A

GP200MHS12

Half Bridge IGBT Module

Replaces GP200MHB12S January 1999 version, DS4339-5.5

DS5296-1.5 November 2000

Fig. 1 Half bridge circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: M

(See package details for further information)

3(C

2(E

1(E

1

2

3

11

10

8

9

5

4

6

7