| Motor de Búsqueda de Datasheet de Componentes Electrónicos |
|
GP200MHS12 Datasheet(PDF) 3 Page - Dynex Semiconductor |
|
|
|||||||||||||||||||||||||||||
GP200MHS12 Datasheet(HTML) 3 Page - Dynex Semiconductor |
|
3 / 10 page ![]() GP200MHS12 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com Test Conditions V GE = 0V, VCE = VCES V GE = 0V, VCE = VCES, Tcase = 125˚C V GE = ±20V, VCE = 0V I C = 10mA, VGE = VCE V GE = 15V, IC = 200A V GE = 15V, IC = 200A, , Tcase = 125˚C DC t p = 1ms I F = 200A I F = 200A, Tcase = 125˚C V CE = 25V, VGE = 0V, f = 1MHz - Parameter Collector cut-off current Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Diode forward current Diode maximum forward current Diode forward voltage Input capacitance Module inductance ELECTRICAL CHARACTERISTICS T case = 25˚C unless stated otherwise. Symbol I CES I GES V GE(TH) V CE(sat) I F I FM V F C ies L M Units mA mA µA V V V A A V V nF nH Max. 1 12 ±1 6.5 3.5 4.0 200 400 2.4 2.5 - - Typ. - - - - 2.7 3.2 - - 2.2 2.3 25 30 Min. - - - 4.5 - - - - - - - - |
|
|
Enlace URL |
| ¿ALLDATASHEET es útil para Ud.? [ DONATE ] |
Todo acerca de Alldatasheet | Publicidad | Contáctenos | Política de Privacidad | Enlace a la hoja de datos | Intercambio de Enlaces | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |