GP200MHS12

2/10

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

www.dynexsemi.com

Test Conditions

Continuous dissipation -

junction to case

Continuous dissipation -

junction to case

Mounting torque 5Nm

(with mounting grease)

Transistor

Diode

-

Mounting - M6

Electrical connections - M6

Parameter

Thermal resistance - transistor (per arm)

Thermal resistance - diode (per arm)

Thermal resistance - case to heatsink (per module)

Junction temperature

Storage temperature range

Screw torque

THERMAL AND MECHANICAL RATINGS

ABSOLUTE MAXIMUM RATINGS - PER ARM

Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme

conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety

precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.

T

Symbol

V

CES

V

GES

I

C

I

C(PK)

P

max

V

isol

Test Conditions

V

-

DC, T

1ms, T

T

Commoned terminals to base plate. AC RMS, 1 min, 50Hz

Units

V

V

A

A

W

V

Max.

1200

±20

200

400

1490

2500

Parameter

Collector-emitter voltage

Gate-emitter voltage

Collector current

Peak collector current

Max. transistor power dissipation

Isolation voltage

Symbol

R

th(j-c)

R

th(j-c)

R

th(c-h)

T

j

T

stg

-

Units

˚C/kW

˚C/kW

˚C/kW

˚C

˚C

˚C

Nm

Nm

Max.

84

160

15

150

125

125

5

5

Min.

-

-

-

-

-

–40

-

-