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GP200MHS12 Datasheet(PDF) 6 Page - Dynex Semiconductor

No. de pieza GP200MHS12
Descripción Electrónicos  Half Bridge IGBT Module
PDF  10 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP200MHS12 Datasheet(HTML) 6 Page - Dynex Semiconductor

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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 9 Diode typical forward characteristics
Fig. 10 Reverse bias safe operating area
Fig. 7 Diode typical turn-off energy vs collector current
Fig. 8 Typical switching characteristics
0
2
4
6
8
10
12
14
16
18
0
25
50
75
100
125
150
175
200
Collector current, IT - (A)
Tcase = 25˚C
Tcase = 125˚C
VGE = ±15V
VCE = 900V
0150
50
100
Collector current, IC - (A)
0
400
900
Tj = 125˚C
VGE =
±15V
VCE = 600V
Rg = 4.7
Ω
tf
td(off)
tr
td(on)
600
500
100
300
200
700
800
200
0
50
100
150
200
250
300
350
400
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Tj = 125˚C
Tj = 25˚C
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, Vce - (V)
50
µs
100
µs
IC max. (single pulse)
I
C max.
DC
(continuous)
tp = 1ms



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