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GP200MHS12 Datasheet(PDF) 4 Page - Dynex Semiconductor

No. de pieza GP200MHS12
Descripción Electrónicos  Half Bridge IGBT Module
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP200MHS12 Datasheet(HTML) 4 Page - Dynex Semiconductor

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GP200MHS12
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
700
200
35
550
110
30
20
Typ.
500
150
25
400
80
20
13
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 200A, VR = 50% VCES,
dI
F/dt = 2500A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
ELECTRICAL CHARACTERISTICS
T
case = 25˚C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
T
case = 125˚C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
µC
Max.
800
250
50
650
150
55
45
Typ.
600
200
40
500
110
40
35
Min.
-
-
-
-
-
-
-
Test Conditions
I
C = 200A
V
GE = ±15V
V
CE = 600V
R
G(ON) = RG(OFF) = 4.7Ω
L ~ 100nH
I
F = 200A, VR = 50% VCES,
dI
F/dt = 2000A/µs
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr



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