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GP200MHS12 Datasheet(PDF) 7 Page - Dynex Semiconductor

No. de pieza GP200MHS12
Descripción Electrónicos  Half Bridge IGBT Module
PDF  10 Pages
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Fabricante Electrónico  DYNEX [Dynex Semiconductor]
Página de inicio  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP200MHS12 Datasheet(HTML) 7 Page - Dynex Semiconductor

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GP200MHS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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www.dynexsemi.com
Fig. 11 Forward bias safe operating area
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Collector-emitter voltage, Vce - (V)
RBSOA
Tcase = 125˚C
Vge = ±15V
Rg = 4.7Ω*
*Recommended minimum value
Fig. 12 Transient thermal impedance
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1000
0.001
0.01
1
0.1
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Pulse width, tp - (s)
Diode
Transistor
Fig. 13 3 Phase inverter operating frequency
Fig. 14 DC current rating vs case temperature
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110
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fmax - (kHz)
PWM Sine Wave.
Power Factor = 0.9,
Modulation Index = 1
Conditions:
Tj = 125°C, Tc = 75°C,
Rg = 4.7Ω, VCC = 600V
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020
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Case temperature, Tcase - (˚C)



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