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AN2647 Datasheet(PDF) 20 Page - STMicroelectronics

No. de pieza AN2647
Descripción Electrónicos  Using the STR91xFA external memory interface
PDF  34 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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AN2647 Datasheet(HTML) 20 Page - STMicroelectronics

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Interfacing with synchronous memory
AN2647
20/34
2.1
PSRAM overview
The key functional block of the MT45W4M (MT45W4MW16BC), as shown in Figure 10 on
page 21, consists of a 4096K x 16 DRAM memory array, the Control Logic, the
Configuration registers and the Input/Output Buffer. The Bus Configuration Register (BCR)
controls the operating modes and timings of the MT45W4M.
2.1.1
Bus interface signals
The MT45W4M is usually connected to a non-multiplexed bus, with a 16-bit data bus and 23
address inputs. However, it can be configured to interface to a multiplexed bus like the
STR91xFA EMI bus. In addition to the standard SRAM control signals such as CE, OE, WE,
UB and LB, the PSRAM has four additional signals that are required for synchronous (burst)
mode operation and are described in Table 7.
Table 7.
PSRAM control signals
Signal
name
Type
Description
CLK
Input
Clock: Synchronizes the memory to the system operating frequency during
synchronous operations. When configured for synchronous operation, the address
is latched on the first rising CLK edge when ADV# is active. CLK must be static
LOW during asynchronous access READ and WRITE operations
ADV#
Input
Address valid: Indicates that a valid address is present on the address inputs.
Addresses can be latched on the rising edge of ADV# during asynchronous READ
and WRITE operations.
CRE
Input
Control register enable: When CRE is HIGH, WRITE operations load the RCR or
BCR registers, and READ operations access the RCR, BCR, or DIDR registers.
Wait
Output
Wait: Provides data-valid feedback during burst READ and WRITE operations.
WAIT is used to arbitrate collisions between refresh and READ/WRITE operations.
WAIT is asserted at the end of a row. WAIT is asserted and should be ignored
during asynchronous mode.
CE#
Input
Chip enable: Activates the device when LOW. When CE# is HIGH, the device is
disabled and goes into standby or deep power-down mode.
OE#
Input
Output enable: Enables the output buffers when LOW. When OE# is HIGH, the
output buffers are disabled.
WE#
Input
Write enable: Determines if a given cycle is a WRITE cycle. If WE# is LOW, the
cycle is a WRITE to either a configuration register or to the memory array.
LB#
Input
Lower byte enable. DQ[7:0]
UB#
Input
Upper byte enable. DQ[15:8]



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