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AM41DL6408H Datasheet(PDF) 39 Page - Advanced Micro Devices

No. de pieza AM41DL6408H
Descripción Electrónicos  Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
PDF  66 Pages
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Fabricante Electrónico  AMD [Advanced Micro Devices]
Página de inicio  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM41DL6408H Datasheet(HTML) 39 Page - Advanced Micro Devices

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November 24, 2003
Am41DL6408H
37
ADV ANCE
I N FO RMAT I O N
Notes:
1.
The I
CC current listed is typically less than 2 mA/MHz, with OE# at VIH.
2.
Maximum ICC specifications are tested with VCC = VCCmax.
3.
I
CC active while Embedded Erase or Embedded Program is in progress.
4.
Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC + 30 ns. Typical sleep mode current is 200 nA.
5.
Not 100% tested.
DC CHARACTERISTICS
CMOS Compatible
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN = VSS to VCC,
V
CC = VCC max
±1.0
µA
I
LIT
RESET# Input Load Current
V
CC = VCC max; RESET# = 12.5 V
35
µA
I
LO
Output Leakage Current
V
OUT = VSS to VCC,
V
CC = VCC max
±1.0
µA
I
LR
Reset Leakage Current
V
CC = VCC max; RESET# = 12.5 V
35
µA
I
LIA
ACC Input Leakage Current
V
CC = VCC max, WP#/ACC
= V
ACC max
35
µA
I
CC1f
Flash V
CC Active Read Current
(Notes 1, 2)
CE#f = V
IL, OE# = VIH,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE#f = V
IL, OE# = VIH,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2f
Flash V
CC Active Write Current (Notes 2,
3)
CE#f = V
IL, OE# = VIH, WE# = VIL
15
30
mA
I
CC3f
Flash V
CC Standby Current (Note 2)
V
CCf = VCC max, CE#f, RESET#,
WP#/ACC = V
CCf ± 0.3 V
0.2
5
µA
I
CC4f
Flash V
CC Reset Current (Note 2)
V
CCf = VCC max, RESET# = VSS ± 0.3 V,
WP#/ACC = V
CCf ± 0.3 V
0.2
5
µA
I
CC5f
Flash V
CC Current Automatic Sleep Mode
(Notes 2, 4)
V
CCf = VCC max, VIH = VCC ± 0.3 V;
V
IL = VSS ± 0.3 V
0.2
5
µA
I
CC6f
Flash V
CC Active Read-While-Program
Current (Notes 1, 2)
CE#f = V
IL, OE# = VIH
Byte
21
45
mA
Word
21
45
I
CC7f
Flash V
CC Active Read-While-Erase
Current (Notes 1, 2)
CE#f = V
IL, OE# = VIH
Byte
21
45
mA
Word
21
45
I
CC8f
Flash V
CC Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE#f = V
IL, OE#f = VIH
17
35
mA
V
IL
Input Low Voltage
–0.2
0.8
V
V
IH
Input High Voltage
2.4
V
CC + 0.2
V
V
HH
Voltage for WP#/ACC Program
Acceleration and Sector
Protection/Unprotection
8.5
9.5
V
V
ID
Voltage for Sector Protection, Autoselect
and Temporary Sector Unprotect
11.5
12.5
V
V
OL
Output Low Voltage
I
OL = 2.0 mA, VCCf = VCCs = VCC min
0.45
V
V
OH1
Output High Voltage
I
OH = –2.0 mA, VCCf = VCCs = VCC min
0.85 x
V
CC
V
V
OH2
I
OH = –100 µA, VCC = VCC min
V
CC–0.4
V
LKO
Flash Low V
CC Lock-Out Voltage (Note 5)
2.0
2.5
V



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