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AM41DL6408H Datasheet(PDF) 57 Page - Advanced Micro Devices |
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AM41DL6408H Datasheet(HTML) 57 Page - Advanced Micro Devices |
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57 / 66 page ![]() November 24, 2003 Am41DL6408H 55 ADV ANCE I N FO RMAT I O N AC CHARACTERISTICS Figure 30. SRAM Read Cycle Notes: 1. WE# = V IH, if CIOs is low, ignore UB#s/LB#s timing. 2. t HZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage levels. 3. At any given temperature and voltage condition, t HZ (Max.) is less than tLZ (Min.) both for a given device and from device to device interconnection. Data Valid High-Z tRC CE#1s Address OE# Data Out tOH tAA tCO1 tOE tOLZ tBLZ tLZ tOHZ tHZ CE2s tCO2 |
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