ST10F272M datasheet(42/175 Pages) STMICROELECTRONICS

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Internal Flash memory

ST10F272M

42/176

5.7

Write operation summary

In general, each write operation is started through a sequence of three steps:

The first instruction is used to select the desired operation by setting its corresponding

selection bit in the Flash Control Register 0.

The second step is the definition of the Address and Data for programming or the

Sectors or Banks to erase.

The last instruction is used to start the write operation, by setting the start bit WMS in

the FCR0.

Once selected, but not yet started, one operation can be canceled by resetting the operation

selection bit.

Available Flash Module Write Operations are summarized in the following Table 25.

Figure 6 shows the complete flow needed for a Write operation.

Figure 6.

Write operation control flow

Table 25.

Flash write operations

Operation

Select bit

Address and data

Start bit

Word Program (32-bit)

WPG

FARL/FARH

FDR0L/FDR0H

WMS

Double Word Program (64-bit)

DWPG

FARL/FARH

FDR0L/FDR0H

FDR1L/FDR1H

WMS

Sector Erase

SER

FCR1L/FCR1H

WMS

Set Protection

SPR

FDR0L/FDR0H

WMS

Program/Erase Suspend

SUSP

None

Start Write Operation

FCR0L.LOCK == 0?

Yes

Write Operation finished?

(Check related busy bit)

Yes

Check Error Status

No error:

Proceed with application

Error:

Error handler, ...

Re-start operation

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