STM32F302XD datasheet(70/168 Pages) STMICROELECTRONICS

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Electrical characteristics

STM32F302xD STM32F302xE

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DocID026900 Rev 4

6.3.4

Embedded reference voltage

The parameters given in Table 23 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 19.

6.3.5

Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 13: Current consumption

measurement scheme.

VPVD6

PVD threshold 6

Rising edge

2.66

2.78

2.9

Falling edge

2.56

2.68

2.8

VPVD7

PVD threshold 7

Rising edge

2.76

2.88

Falling edge

2.66

2.78

2.9

VPVDhyst(2)

PVD hysteresis

100

IDD(PVD)

PVD current

consumption

0.15

0.26

µA

1. Data based on characterization results only, not tested in production.

2. Guaranteed by design, not tested in production.

Table 22. Programmable voltage detector characteristics (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

Unit

Table 23. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C 1.16

1.2

1.25

–40 °C < TA < +85 °C 1.16

1.2

1.24(1)

1. Data based on characterization results, not tested in production.

TS_vrefint

ADC sampling time when

reading the internal

reference voltage

-2.2

µs

VRERINT

Internal reference voltage

spread over the

temperature range

VDD = 3 V ±10 mV

10(2)

2. Guaranteed by design, not tested in production.

TCoeff

Temperature coefficient

100(2) ppm/°C

Table 24. Internal reference voltage calibration values

Calibration value name

Description

Memory address

VREFINT_CAL

Raw data acquired at

temperature of 30 °C

VDDA= 3.3 V

0x1FFF F7BA - 0x1FFF F7BB

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