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STM32F302XD Datasheet(PDF) 96 Page - STMicroelectronics |
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STM32F302XD Datasheet(HTML) 96 Page - STMicroelectronics |
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96 / 168 page ![]() Electrical characteristics STM32F302xD STM32F302xE 96/168 DocID026900 Rev 4 Synchronous waveforms and timings Figure 24 and Figure 27 present the synchronous waveforms and Table 53 to Table 56 provide the corresponding timings. The results shown in these tables are obtained with the following FSMC configuration: • BurstAccessMode = FMC_BurstAccessMode_Enable; • MemoryType = FMC_MemoryType_CRAM; • WriteBurst = FMC_WriteBurst_Enable; • CLKDivision = 1; • DataLatency = 2 for NOR Flash; DataLatency = 0 for PSRAM In all timing tables, the THCLK is the HCLK clock period (with maximum FMC_CLK = 36 MHz). Table 51. Asynchronous multiplexed PSRAM/NOR write timings(1) 1. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 4THCLK-1 4THCLK+1 ns tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK THCLK+0.5 tw(NWE) FMC_NWE low time 2THCLK-0.5 2THCLK+1 th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK-0.5 - tv(A_NE) FMC_NEx low to FMC_A valid - 5 tv(NADV_NE) FMC_NEx low to FMC_NADV low 1 2.5 tw(NADV) FMC_NADV low time THCLK-2 THCLK+2 th(AD_NADV) FMC_AD(adress) valid hold time after FMC_NADV high) THCLK-2 - th(A_NWE) Address hold time after FMC_NWE high THCLK-1 - th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK-0.5 - tv(BL_NE) FMC_NEx low to FMC_BL valid - 1 tv(Data_NADV) FMC_NADV high to Data valid - THCLK +3.5 th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 - Table 52. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1) 1. Based on characterization, not tested in production. Symbol Parameter Min Max Unit tw(NE) FMC_NE low time 9THCLK 9THCLK+0.5 ns tw(NWE) FMC_NWE low time 6THCLK 6THCLK+2 tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+6 - th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 5THCLK-5 - |
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