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STM32F302XD Datasheet(PDF) 87 Page - STMicroelectronics

No. de pieza STM32F302XD
Descripción Electrónicos  CRC calculation unit
PDF  168 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F302XD Datasheet(HTML) 87 Page - STMicroelectronics

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STM32F302xD STM32F302xE
Electrical characteristics
146
Note:
For information on selecting the crystal, refer to the application note AN2867 “Oscillator
design guide for ST microcontrollers” available from the ST website www.st.com.
Figure 18. Typical application with a 32.768 kHz crystal
Note:
An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden
to add one.
6.3.8
Internal clock source characteristics
The parameters given in Table 40 are derived from tests performed under ambient
temperature and supply voltage conditions summarized in Table 19.
High-speed internal (HSI) RC oscillator
Table 40. HSI oscillator characteristics(1)
1. VDDA = 3.3 V, TA = –40 to 105 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fHSI
Frequency
-
-
8
-
MHz
TRIM
HSI user trimming step
-
-
-
1(2)
2. Guaranteed by design, not tested in production.
%
DuCy(HSI)
Duty cycle
-
45(2)
-55(2)
%
ACCHSI
Accuracy of the HSI
oscillator
TA = -40 to 105°C
-2.8(3)
3. Data based on characterization results, not tested in production.
-3.8(3)
%
TA = -10 to 85°C
-1.9(3)
-2.3(3)
TA = 0 to 85°C
-1.9(3)
-2(3)
TA = 0 to 70°C
-1.3(3)
-2(3)
TA = 0 to 55°C
-1(3)
-2(3)
TA = 25°C(4)
4. Factory calibrated, parts not soldered.
-1
-
1
tSU(HSI)
HSI oscillator startup time
-
1(2)
-2(2)
μs
IDDA(HSI)
HSI oscillator power
consumption
-
-
80
100(2)
μA



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