AS1163 datasheet(16/91 Pages) AMSOSRAM

16 / 91 page

AS1163

Electrical characteristics

Datasheet • PUBLIC • Document Feedback

DS001075 • v2-00 • 2025-Nov-21

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Symbol

Parameter

Conditions

Min

Typ

Max

Unit

ADC_GAIN_ERR

Gain variation

Vf meas,

referred to full-

scale. Tested

with VDD=5V

-1.12

1.12

ADC_DNL

DNL

Vf meas.

Valid for

Tj<125ºC

-1

LSB

ADC_INL

INL

Vf meas.

-3

LSB

ADC_TSAMPLE

Vf meas.

1.6

µs

T_acc

Temperature sensor

accuracy

Room temp.

-8

ºC

T_AMB

Ambient temperature

-40

125

ºC

T_J

Junction temperature

-40

150

ºC

Rth

Thermal resistance

from junction to

ambient temperature

JEDEC 2s2p

PCB

°C/W

V_th_se_high

Threshold on SIOx_x

to detect

communication mode

(high)

2.85

VDD+0.3

V_th_se_low

Threshold on SIOx_x

to detect

communication mode

(low)

-0.3

0.7

V_SIOx_P/N(O,L)

Output low level for

pin SIOx_P and

SIOx_N for single-

ended communication

10k Ohm load

0.7

V_SIOx_P/N(O,H)

Output high level for

pin SIOx_P and

SIOx_N for single-

ended communication

10k Ohm load

VDD-0.7

VDD

F_com_mcu

Allowed input data

rate for

communication in

MCU mode. Tested

with VDD=5V.

2.23

2.4

2.62

Mbps

DUTY_com_mcu

Allowed input duty

cycle in MCU mode.

Tested with VDD=5V.

47.5

52.5

F_com_can

Allowed input data

rate for

communication in

CAN RTX mode.

Tested with VDD=5V.

2.31

2.4

2.55

Mbps

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