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S25FL256SDPNFAQ Datasheet(PDF) 86 Page - Cypress Semiconductor

No. de pieza S25FL256SDPNFAQ
Descripción Electrónicos  128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte) 128 Mbit (16 Mbyte)/256 Mbit (32 Mbyte)
PDF  149 Pages
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Fabricante Electrónico  CYPRESS [Cypress Semiconductor]
Página de inicio  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

S25FL256SDPNFAQ Datasheet(HTML) 86 Page - Cypress Semiconductor

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Document Number: 001-98283 Rev. *M
Page 85 of 148
S25FL128S/S25FL256S
9.4.1
Read (Read 03h or 4READ 13h)
The instruction
03h (ExtAdd=0) is followed by a 3-byte address (A23-A0) or
03h (ExtAdd=1) is followed by a 4-byte address (A31-A0) or
13h is followed by a 4-byte address (A31-A0)
Then the memory contents, at the address given, are shifted out on SO. The maximum operating clock frequency for the READ
command is 50 MHz.
The address can start at any byte location of the memory array. The address is automatically incremented to the next higher address
in sequential order after each byte of data is shifted out. The entire memory can therefore be read out with one single read
instruction and address 000000h provided. When the highest address is reached, the address counter will wrap around and roll back
to 000000h, allowing the read sequence to be continued indefinitely.
Figure 9.6 Read Command Sequence (3-byte Address, 03h [ExtAdd=0])
Figure 9.7 Read Command Sequence (4-byte Address, 13h or 03h [ExtAdd=1])
1
3
2
10
9
8
7
6
5
4
0
31
30
29
28
Instruction
24-Bit
Address
23
21
22
1
3
2
0
1
3
2
0
7
6
5
4
36
35
34
33
32
39
38
37
SCK
SI
SO
High Impedance
MSB
DATA OUT 1
DATA OUT 2
7
MSB
CS#
1
3
2
10
9
8
7
6
5
4
0
39
38
37
36
Instruction
32-Bit
Address
31
29
30
1
3
2
0
1
3
2
0
7
6
5
4
44
43
42
41
40
47
46
45
SCK
SI
SO
High Impedance
MSB
DATA OUT 1
DATA OUT 2
7
MSB
CS
#



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