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S25FL256SDPNFAQ Datasheet(PDF) 90 Page - Cypress Semiconductor |
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S25FL256SDPNFAQ Datasheet(HTML) 90 Page - Cypress Semiconductor |
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90 / 149 page ![]() Document Number: 001-98283 Rev. *M Page 89 of 148 S25FL128S/S25FL256S Figure 9.15 Quad Output Read Command Sequence (4-byte Address, 6Ch or 6Bh [ExtAdd=1], LC=11b) 9.4.5 Dual I/O Read (DIOR BBh or 4DIOR BCh) The instruction BBh (ExtAdd=0) is followed by a 3-byte address (A23-A0) or BBh (ExtAdd=1) is followed by a 4-byte address (A31-A0) or BCh is followed by a 4-byte address (A31-A0) The Dual I/O Read commands improve throughput with two I/O signals — IO0 (SI) and IO1 (SO). It is similar to the Dual Output Read command but takes input of the address two bits per SCK rising edge. In some applications, the reduced address input time might allow for code execution in place (XIP) i.e. directly from the memory device. The maximum operating clock frequency for Dual I/O Read is 104 MHz. For the Dual I/O Read command, there is a latency required after the last address bits are shifted into SI and SO before data begins shifting out of IO0 and IO1. There are different ordering part numbers that select the latency code table used for this command, either the High Performance LC (HPLC) table or the Enhanced High Performance LC (EHPLC) table. The HPLC table does not provide cycles for mode bits so each Dual I/O Read command starts with the 8 bit instruction, followed by address, followed by a latency period. This latency period (dummy cycles) allows the device internal circuitry enough time to access data at the initial address. During the dummy cycles, the data value on SI and SO are “don’t care” and may be high impedance. The number of dummy cycles is determined by the frequency of SCK (see Table 28 on page 51). The number of dummy cycles is set by the LC bits in the Configuration Register (CR1). The EHPLC table does provide cycles for mode bits so a series of Dual I/O Read commands may eliminate the 8-bit instruction after the first Dual I/O Read command sends a mode bit pattern of Axh that indicates the following command will also be a Dual I/O Read command. The first Dual I/O Read command in a series starts with the 8-bit instruction, followed by address, followed by four cycles of mode bits, followed by a latency period. If the mode bit pattern is Axh the next command is assumed to be an additional Dual I/O Read command that does not provide instruction bits. That command starts with address, followed by mode bits, followed by latency. The Enhanced High Performance feature removes the need for the instruction sequence and greatly improves code execution (XIP). The upper nibble (bits 7-4) of the Mode bits control the length of the next Dual I/O Read command through the inclusion or exclusion of the first byte instruction code. The lower nibble (bits 3-0) of the Mode bits are “don’t care” (“x”) and may be high impedance. If the Mode bits equal Axh, then the device remains in Dual I/O Enhanced High Performance Read Mode and the next address can be entered (after CS# is raised high and then asserted low) without the BBh or BCh instruction, as shown in Figure 63; thus, eliminating eight cycles for the command sequence. The following sequence will release the device from Dual I/O Enhanced High Performance Read mode; after which, the device can accept standard SPI commands: During the Dual I/O Enhanced High Performance Command Sequence, if the Mode bits are any value other than Axh, then the next time CS# is raised high the device will be released from Dual I/O Read Enhanced High Performance Read mode. 0 1 2 3 4 5 6 7 8 38 39 40 41 42 43 44 45 46 47 Instruction 32 Bit Address Data 1 Data 2 Data 3 Data 3 7 6 5 4 3 2 1 0 31 1 0 4 0 4 0 4 0 4 0 5 1 5 1 5 1 5 1 6 2 6 2 6 2 6 2 7 3 7 3 7 3 7 3 CS# SCK IO0 IO1 IO2 IO3 |
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