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STLC5465B Datasheet(PDF) 39 Page - STMicroelectronics

No. de pieza STLC5465B
Descripción Electrónicos  MULTI-HDLCWITH n x 64 SWITCHING MATRIX ASSOCIATED
PDF  101 Pages
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Fabricante Electrónico  STMICROELECTRONICS [STMicroelectronics]
Página de inicio  http://www.st.com
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STLC5465B Datasheet(HTML) 39 Page - STMicroelectronics

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III - FUNCTIONAL DESCRIPTION (continued)
7
N
ADM0/16, NWE, NOE
ar e con necte dto each circuit
CE7
5
NCE5
1
NCE1
3
NCE3
6
NCE6
4
NCE4
0
NCE0
2
NCE2
DM8/15
DM0/7
128K x 16
128K x 8 circu it
Figure 25 :n x 128K x 16 SRAM Memory
Organization
7
RAS3
5
RAS2
1
RAS0
3
RAS1
6
4
0
2
DM8/15
DM0/7
256K x 16
CAS1
CAS0
ADM0/8, NWE , NO E a re conne cte d to ea ch circuit.
Figure 27 : 256K x 16 DRAM Circuit Organization
III.5.4 - SRAM interface
The SRAM space achieves 1 Mbyte max. It is
always organized in 16 bits. The structure of the
memory plane is shown in the following figures.
Because of the different chips usable, 19 address
wires and 8 NCE (Chip Enable) are necessary to
address the 1 Mbyte. The NCE selects the Most or
Least Significant Byte versus the value of A0 deliv-
ered by the
µP and the location of chip in the
memory space.
III.5.4.1 - 128K x 16 (up to 512K x 16) SRAM
This memory can be obtained with two 128K x 8
SRAM circuits (up to eight circuits)
Signals
A19
A18
A0 or equiv.
NCE7
1
1
1
NCE6
1
1
0
NCE5
1
0
1
NCE4
1
0
0
NCE3
0
1
1
NCE2
0
1
0
NCE1
0
0
1
NCE0
0
0
0
The Address bits delivered by the
Multi-HDLC for
128K x 8 SRAM circuits are :
ADM0/14 and ADM15/16 (17 bits) corresponding
with A1/17 delivered by the
µP.
The Address bits delivered by the
Multi-HDLC for
512K x n SRAM circuits are :
ADM0/14 and ADM15/18 (19 bits) corresponding
with A1/19 delivered by the
µP.
III.5.5 - DRAM Interface
In DRAM, the memory space can achieve up to 16
megabytes organized by 16 bits. Eleven address
wires, four NRAS and two NCAS are needed to
select any byte in the memory. One NRAS signal
selects 1 bank of 4 and the NCAS signals select the
bytes concerned by the transfer (1 or 2 selecting a
byte or a word). The DRAM memory interface is
then defined. The ”RAS only” refresh cycles will
refresh all memory locations. The refresh is pro-
grammable. The frequency of the refresh is fixed
by the memory requirements.
III.5.5.1 - 256K x n DRAM Signals
Signals
A20
A19
A0
6800
NRAS3
1
1
NRAS2
1
0
NRAS1
0
1
NRAS0
0
0
NCAS1
1
UDS
NCAS0
0
LDS
The Address bits delivered by the
Multi-HDLC for
256K x n DRAM circuits are :
ADM0/8 (2 x 9 = 18 bits) corresponding with A1/18
delivered by the
µP.
III.5.4.2 - 512K x n SRAM
Signals
A0 or equiv.
NCE1
1
NCE0
0
ADM0/18, NWE, NOE
are conne cted to each circuit
1
NCE1
0
NCE0
DM8/15
DM0/7
512K x 16
512K x 8 circuit
Figure 26 :512K x 8 SRAM Circuit Memory
Organization
STLC5465B
39/101



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